Technology Development Integration Engineer – RF Gan

Technology Development Integration Engineer – RF Gan

Requirements

• Requires a technical (University) degree in the field of Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR).
• BS + 2-4 years of experience or MS + 1-3 year of experience PhD + 0-1 year of experience
• Knowledge of GaN HEMT and modern semiconductor device physics and device characterization(DC, s-parameter, load pull, pulsed I-V)
• Experience in semiconductor processing with emphasis on wide band gap materials like the III-N material system
• Must have at least an overall 3.0 GPA and proven good academic standing.
• Language Fluency – English (Written & Verbal)
• Physical Capacity Demands – some amount of time required to work in a manufacturing clean room, with product handling.
• Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments.

Responsibilities

• This position offers the unique opportunity to develop innovative RF GaN technologies as a Process Integration Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation.
• Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers.
• Collaborate with various engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Preferred Qualifications

• Master’s or PhD in Electrical Engineering, Materials Science, Solid State Physics or other relevant Electrical engineering, engineering or physical science discipline.
• Prior related internship or co-op experience.
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills.
• Strong planning & organizational skills.
• Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
• Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design.
• Experience in semiconductor processing in GaN-on-Silicon technologies.
• Experience characterizing GaN-on-Si or Wide Bandgap devices.
• Excellent interpersonal skills, energetic, motivated, and self-driven.
• Demonstrate ability to work well within a global matrixed team or environment with minimal supervision.