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Optoelectronics Design Engineer
Company | Broadcom Limited |
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Location | Allentown, PA, USA |
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Salary | $127100 – $203400 |
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Type | Full-Time |
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Degrees | PhD |
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Experience Level | Senior |
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Requirements
- A Ph.D. in Electrical Engineering, Physics or related field.
- At least 7 years’ direct experience in the design and characterization of high power and high speed III-V edge-emitting semiconductor devices.
- Extensive theoretical and experimental knowledge of III-V semiconductor material properties, epitaxial growth and wafer fabrication processes.
- Direct experience with DC, RF and digital transmission testing of high-speed optoelectronic devices and systems.
- Demonstrated leadership ability to organize and execute product development projects involving multiple teams across a variety of disciplines.
Responsibilities
- Design and characterization of state-of-the-art high power, narrow linewidth, wavelength tunable and high speed InP optoelectronic devices.
- Organization and execution of product development projects from concept to manufacturing.
- Leadership of multi-disciplinary wafer fabrication, testing, assembly and operations teams to define and execute projects.
- Qualification of optoelectronic devices per Telcordia standards.
- Documentation of product designs and manufacturing processes.
- Analysis of product performance and implementation of yield improvement plans.
Preferred Qualifications
- Direct experience in process development and wafer fabrication of III-V semiconductor devices, including photolithography, thin-film deposition, wet and dry etching techniques.
- Experience using commercial photonic and RF design software packages.
- Experience applying statistical analysis techniques and process control in a manufacturing environment.