Gan Device and MMIC Modeling Engineer

Gan Device and MMIC Modeling Engineer

Requirements

• Experience in GaN HEMTs which should span functions including design, modeling, processing, and characterization of GaN HEMTs.
• Practical and theoretical understanding of RF electronic devices
• Deep understanding of non-linear compact modeling including parameter extraction and validation techniques
• Hands-on experience with writing, winning and executing research projects. Must have authored scientific publications and given technical presentations.
• Able to pursue difficult technical subjects independently, design experiments, analyze data, and provide solutions.
• Able to produce technical presentations and reports and communicate effectively with colleagues and customers.
• Excellent written and verbal communications skills.
• PhD in electrical engineering or related field
• Able to work within a semiconductor cleanroom environment
• U.S. citizen or Permanent Resident status required

Responsibilities

• Research and Development of advanced compact models for MMIC design using GaN HEMT technologies
• Collaborate with process, RF test, CAD, and EDA engineers to develop, test, document, and release MMIC PDKs in Keysight ADS and Cadence AWR
• Develop non-linear compact modeling including parameter extraction and validation techniques; Experience with field effect transistor models such as MVSG, ASM-HEMT, Angelov
• Support internal and external MMIC design teams in performing accurate and efficient simulations of MMICs and modules and establish best practices for MMIC design
• Support the research, development, and maturation of advanced GaN technologies, including device and process engineering
• Assist or lead with writing proposals for contracted research and development program capture

Preferred Qualifications

No preferred qualifications provided.